NY8320NSC/NY8320NSCP
高Tg、低膨胀系数、高模量
优秀的耐热性及耐CAF性能
优异通孔可靠性及PCB加工性
无卤
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CPU/GPU -
应用处理器Application processer
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闪存NAND Flash
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手机动态内存mDRAM
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射频系统级封装 -
天线封装RF SiP
NY8320NSC基板典型性能 Typical Properties for NY8320NSC Laminate
| Property | Item | IPC-TM-650 | Test Condition | Unit | Typical Value | |
| Thermal | Glass Transition Temperature | 2.4.25 | DSC | ℃ | \ | |
| 2.4.24 | TMA | ℃ | 220~240 | |||
| 2.4.24.4 | DMA | ℃ | 260~290 | |||
（1078×2） X/Y-axis CTE | 2.4.24.5 | ＜Tg,TMA | PPM/℃ | 7 | ||
（2116×8） Z-axis CTE | 2.4.24 | ＜Tg,TMA | PPM/℃ | 15 | ||
| ＞Tg,TMA | PPM/℃ | 55 | ||||
| 2.4.24 | 50~260℃ | % | 0.6~0.8 | |||
| Decomposition Temperature | 2.4.24.6 | TGA(5%W.L) | ℃ | 430 | ||
| Thermal Resistance | 2.4.24.1 | Clad | Min | ＞60 | ||
| Etched | Min | ＞60 | ||||
| Electrical | (R/C:50%) Permittivity | 1MHz | 2.5.5.9 | C-24/23/50 | — | \ |
| 1GHz | 4.5 | |||||
| 10GHz | SPDR method | 4.4 | ||||
| (R/C:50%) Loss Tangent | 1MHz | 2.5.5.9 | C-24/23/50 | — | \ | |
| 1GHz | — | 0.006 | ||||
| 10GHz | SPDR method | 0.007 | ||||
| Volume Resistivity | 2.5.17.1 | C-96/35/90 | MΩ-cm | 1.0×109 | ||
| Surface Resistivity | MΩ | 1.0×108 | ||||
| Physical | Water Absorption | 2.6.2.1 | E-1/105+D-24/23 | % | 0.1 | |
(HTE) Peel Strength | Toz | 2.4.8 | As Received | N/mm | \ | |
(RTF) Peel Strength | Toz | \ | ||||
(VLP) Peel Strength | Toz | 0.7 | ||||
| Flexural Modulus | GB / T 9341-2018 | @RT | Gpa | 29\30 | ||
| Young's Modulus | GB / T 1040.1-2018 | @RT | Gpa | 29\30 | ||
| Flame Resistance | UL-94 | A&E-4/125 | — | V-0 | ||
